High-Temperature Silicon Carbide (SiC) Heating Elements | 1550°C Capability
Discover durable, economical Silicon Carbide (SiC) heating elements engineered for extreme environments up to 1550°C. These premium heating solutions are ideal for metallurgy, ceramics, glass manufacturing, and laboratory equipment applications.
Silicon Carbide (SiC) Electric Heating Elements
Silicon Carbide (SiC) heating elements are premium non-metal electric heaters specifically designed for extreme temperatures and harsh industrial environments. Manufactured from high-purity green silicon carbide, they undergo precise forming, siliconizing, and recrystallization processes at high temperatures to deliver reliable, long-lasting performance. These elements represent the optimal economical solution for demanding high-temperature applications.
Key Applications of SiC Heating Elements
- Electronics Manufacturing
- Metallurgical Processing
- Aluminum & Zinc Industries
- Ceramics & Porcelain Kilns
- Float Glass Production
- Optical Glass Manufacturing
- Laboratory & Research Furnaces
- Fluorescent Powder Processing
Operating Guidelines: Surface Load & Atmospheric Effects
For optimal performance and extended lifespan, it is crucial to operate within recommended surface load limits based on your furnace atmosphere and temperature conditions.
| Atmosphere |
Max. Furnace Temp. (°C) |
Max. Surface Load (W/cm²) |
Effect on SiC Element |
| Ammonia (NH₃) |
1290 |
3.8 |
Produces methane, damaging the protective SiO₂ layer |
| Carbon Dioxide (CO₂) |
1450 |
3.1 |
Corrosive to silicon carbide |
| Carbon Monoxide (CO) |
1370 |
3.8 |
Carbon deposition can impair the SiO₂ layer |
| Halogen Gases |
704 |
3.8 |
Highly corrosive; destroys SiO₂ layer |
| Hydrogen (H₂) |
1290 |
3.1 |
Produces methane, damaging the protective SiO₂ layer |
| Nitrogen (N₂) |
1370 |
3.1 |
Can form an insulating silicon nitride layer |
| Sodium Vapor |
1310 |
3.8 |
Corrosive to silicon carbide |
| Silicon Dioxide |
1310 |
3.8 |
Corrosive to silicon carbide |
| Oxygen / Air |
1310 |
3.8 |
Oxidizes SiC (forms protective SiO₂ at correct temps) |
| Water Vapor |
1090-1370 |
3.1-3.6 |
Forms silicon hydrates, accelerating aging |
| Hydrocarbons |
1370 |
3.1 |
Carbon pickup leads to "hot spot" failure |
How to Order: Required Specifications
Please provide the following details for a quote or order:
- Type: (e.g., Standard "U" Shape)
- Outer Diameter (OD): in mm or inches
- Hot Zone Length (HZ): The heated section length
- Cold End Length (CZ): The unheated terminal section length
- Shank Spacing (A): Center-to-center distance between cold ends
- Overall Resistance: Rated resistance in ohms (Ω)
Ordering Example
Specification: U-Type, 20mm OD, 300mm Hot Zone, 200mm Cold Ends, 60mm Shank Spacing, 1.84Ω Resistance
SiC U20/300/200/60/1.84Ω
